Semiconductor devices including insulative materials extending between conductive structures

ABSTRACT

Disclosed herein is a device that includes: a semiconductor substrate; a first insulating layer over a surface of the semiconductor substrate; first and second contact plugs each including side and upper surfaces, the side surfaces of the first and second contact plugs being surrounded by the first insulating film, the upper surfaces of the first and second contact plugs being substantially on the same plane with an upper surface of the first insulating layer; a second insulating layer over the first insulating layer; a first conductive layer including a bottom portion on the first contact plug and a side portion surrounded by the second insulating layer; a third insulating layer over the first conductive layer; and a second conductive layer on the second contact plug, a part of a side surface of the second conductive layer being surrounded by both the second and third insulating layers.

RELATED PATENT DATA

This patent resulted from a divisional of U.S. patent application Ser.No. 15/045,490, filed Feb. 17, 2016, which is a continuation applicationof U.S. patent application Ser. No. 14/462,766, filed Aug. 19, 2014,entitled “Semiconductor Device And Semiconductor Memory Devices HavingFirst, Second, And Third Insulating Layers”, naming Takashi Sasaki asinventor, the disclosures of which are incorporated by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a semiconductor device and moreparticularly relates to a semiconductor device in which the uppersurfaces of storage-node contact plugs and the upper surfaces ofperipheral contact plugs are located in the same plane.

Description of Prior Art

A semiconductor device such as a DRAM (Dynamic Random Access Memory) hasa memory cell area and a peripheral circuit area formed on a principalsurface of a semiconductor substrate. The memory cell area includes aplurality of memory cells each having a cell transistor and a storagenode. The peripheral circuit area includes various peripheral circuitsfor performing operations such as read operation and write operation tothe memory cells in the memory cell area.

Japanese Patent Application Laid-open No. 2012-99793 discloses aspecific example of a structure of cell transistors included in memorycells and a structure of peripheral transistors formed in a peripheralcircuit area.

In a semiconductor device described in Japanese Patent ApplicationLaid-open No. 2012-99793, a first interlayer insulating film 33 isformed on a surface of a semiconductor substrate that embeds bit lines30, capacitor contact plugs 34 (storage-node contact plugs), andsource/drain contact plugs 34 a (peripheral contact plugs). Thecapacitor contact plugs are used to connect source/drain electrodes ofthe cell transistors to lower electrodes 35 of cell capacitors. Thesource/drain contact plugs 34 a are used to connect source/drainelectrodes of the peripheral transistors to an upper layer wiring 35 a.A cover insulating film 28 and a side-wall insulating film 31 a coverthe upper and side surfaces of the bit lines 30, respectively. The coverinsulating film 28 and the side-wall insulating film 31 a are alsoentirely embedded in the first interlayer insulating film 33. Althoughnot described in detail in Japanese Patent Application Laid-open No.2012-99793, a manufacturing procedure from formation of the bit lines 30to formation of the lower electrodes 35 in the semiconductor devicehaving the above structure may be as follows.

That is, a conductive film and an insulating film are first formed inthis order and then these films are patterned to obtain the bit lines 30and the cover insulating film 28. Another insulating film is then formedon the entire surface and is etched back to form the side-wallinsulating film 31 a. The first interlayer insulating film 33 is thenformed in a thickness to cover the cover insulating film 28. The uppersurface of the first interlayer insulating film 33 is flattened, andthen through holes for embedding therein the capacitor contact plugs 34and the source/drain contact plugs 34 a are provided in the firstinterlayer insulating film 33. A conductive film is formed in athickness to fill the through holes. Then the surface is flattened so asto expose the upper surface of the first interlayer insulating film 33to form the capacitor contact plugs 34 and the source/drain contactplugs 34 a.

A conductive film is then formed again and is patterned to form thewiring 35 a having the lower surface that is in contact with thesource/drain contact plugs 34 a on the upper surface of the firstinterlayer insulating film 33. An insulating film that covers the wiring35 a is further formed on the entire surface. Through holes passingthrough the insulating film are formed, and then the inner surfaces ofthe through holes are covered with a conductive film to form the lowerelectrodes 35 having the lower surfaces that are in contact with thecapacitor contact plugs 34.

However, the above manufacturing procedure has a problem that, at thetime of formation of the wiring 35 a, the capacitor contact plugs 34 maybe damaged. Also the insulating film (the cover insulating film 28 andthe first interlayer insulating film 33) covering the upper surfaces ofthe bit lines 30 is reduced in the thickness, which adversely reduces ashort margin between the bit lines 30 and a silicon oxide film. This isbecause the capacitor contact plugs 34 and the insulating film thatcovers the upper surfaces of the bit lines 30 are subjected to anetching condition to form the wiring 35 a. That is, because thethickness of the conductive film or the etching speed is not completelyuniform in the surface, the etching is continued in a certain area evenafter the wiring 35 a is completely removed when the conductive film ispatterned to form the wiring 35 a. On the surface from which the wiring35 a has been completely removed, the capacitor contact plugs 34 and theinsulating film that covers the upper surfaces of the bit lines 30 areexposed and thus subjected to an etching condition. As a result, theproblem as mentioned above occurs.

SUMMARY

In one embodiment, there is provided a semiconductor device thatincludes: a semiconductor substrate; a first insulating layer over asurface of the semiconductor substrate; first and second contact plugseach including side and upper surfaces, the respective side surfacessurrounded by the first insulating layer, the respective upper surfacesbeing substantially on the same plane with an upper surface of the firstinsulating layer; a second insulating layer over the first insulatinglayer; a first conductive layer including a bottom portion on the firstcontact plug and a side portion surrounded by the second insulatinglayer; a third insulating layer over the first conductive layer; and asecond conductive layer on the second contact plug, a part of a sidesurface of the second conductive layer surrounded by both the second andthird insulating layers.

In another embodiment, there is provided a semiconductor device thatincludes: a semiconductor substrate including a memory cell area and aperipheral circuit area; a peripheral transistor having source and drainregions in the peripheral circuit area; an access transistor in thememory cell area; a capacitor including a lower electrode in the memorycell area; a first insulating layer over the memory cell area and aperipheral circuit area; a first contact plug surrounded by the firstinsulating layer and contacted with one of the source and drain regions;a wiring layer on the first contact plug; a second contact plugsurrounded by the first insulating layer and connecting the accesstransistor to the lower electrode; a second insulating layer over thefirst insulating layer and covering both a part of a side surface of thewiring and a part of a side surface of the lower electrode; and a thirdinsulating layer over the second insulating layer and covering both anupper surface of the wiring and a part of the side surface of the lowerelectrode.

In still another embodiment, there is provided a semiconductor devicethat includes: a first insulating layer; first and second contact plugsincluding respective side surfaces each surrounded by the firstinsulating layer; a second insulating layer over the first insulatinglayer; a first conductive layer on the first contact plug and having aside surface surrounded by the second insulating layer; a thirdinsulating layer over the second insulating layer and the firstconductive layer; and a second conductive layer on the second contactplug, a part of the second conductive layer surrounded by both thesecond and third insulating layers.

According to the present invention, the first conductive layer connectedto the first contact plugs can be formed in a state where the secondinsulating layer that covers the second contact plugs is formed.Therefore, damaging of the second contact plugs at the time of formationof the first conductive layer can be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a plan view showing a semiconductor device according to anembodiment of the present invention;

FIGS. 1B to 1F are respectively cross sectional views of thesemiconductor device along lines A-A to E-E in FIG. 1A;

FIGS. 2A to 49A each are plan views indicative of one process of amethod of manufacturing the semiconductor device shown in FIGS. 1A to1F;

FIGS. 2B to 49B are respectively cross sectional views of thesemiconductor device along lines A-A in FIGS. 2A to 49A;

FIGS. 2C to 49C are respectively cross sectional views of thesemiconductor device along lines B-B in FIGS. 2A to 49A;

FIGS. 2D to 49D are respectively cross sectional views of thesemiconductor device along lines C-C in FIG. 2A to 49A;

FIGS. 2E to 49E are respectively cross sectional views of thesemiconductor device along lines D-D in FIGS. 2A to 49A;

FIGS. 2F to 49F are respectively cross sectional views of thesemiconductor device along lines E-E in FIGS. 2A to 49A;

FIG. 50A is a plan view showing a semiconductor device according to afirst modified embodiment of the present invention;

FIGS. 50B to 50F are respectively cross sectional views of thesemiconductor device along lines A-A to E-E in FIG. 50A;

FIG. 51A is a plan view showing a semiconductor device according to asecond modified embodiment of the present invention; and

FIGS. 51B to 51F are respectively cross sectional views of thesemiconductor device along lines A-A to E-E in FIG. 51A.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Preferred embodiments of the present invention will be explained belowin detail with reference to the accompanying drawings. The followingdetailed description refers to the accompanying drawings that show, byway of illustration, specific aspects and embodiments in which thepresent invention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice thepresent invention. Other embodiments may be utilized, and structure,logical and electrical changes may be made without departing from thescope of the present invention. The various embodiments disclosed hereinare not necessarily mutually exclusive, as some disclosed embodimentscan be combined with one or more other disclosed embodiments to form newembodiments.

A semiconductor device 1 according to the embodiment of the presentinvention is, for example, a DRAM that is formed on a semiconductorsubstrate 2 as shown in FIG. 1B. As shown in FIG. 1A, a principalsurface of the semiconductor substrate is sectioned into a memory cellarea MA and a peripheral circuit area PA. FIG. 1A shows a part of thememory cell area MA and a part of the peripheral circuit area PA of anactual semiconductor device. A structure of transistors in theperipheral circuit area PA is illustrated for the purpose ofexplanations of the present embodiment and does not necessarilycorrespond to a structure of actual transistors.

Element isolation regions I made of insulating films are formed by anSTI (Shallow Trench Isolation) method and embedded in the principalsurface of the semiconductor substrate 2. A plurality of active regionsK_(M) and a plurality of active regions K_(P) defined by the elementisolation regions I are formed in the memory cell area MA and theperipheral circuit area PA, respectively.

Each of the active regions K_(M) is a parallelogram that has one of twopairs of opposite sides extending in a y direction and the other pairextending in an x′ direction that inclines with respect to an xdirection and the y direction. The active regions K_(M) are repeatedlyarranged in the x direction and the y direction to form a matrix. Twomemory cells are formed in each of the active regions K_(M). However,only one memory cell is formed in each of the active regions K_(M)located at ends of the memory cell area MA. When the width of the pairof opposite sides extending in the x′ direction is close to a resolutionlimit of an exposure apparatus, the vertices of the parallelogram arepossibly rounded, which causes the positions of the vertices to beobscure, or straight line portions of the opposite sides extending inthe x′ direction are possibly undetermined.

A plurality of word lines WL and a plurality of bit lines BL are formedin the memory cell area MA.

Each of the word lines WL is made of a conductive material embedded in agate trench that is provided in the principal surface of thesemiconductor substrate 2. A gate insulating film 15 is formed betweenthe word lines WL and the inner surface of the gate trench. Each of theword lines WL is embedded only in a lower portion of the gate trench. Asilicon nitride film 18 (cap insulating film) covering the uppersurfaces of the word lines WL is embedded in an upper portion of thegate trench. The silicon nitride film 18 functions to ensure insulationbetween storage-node contact plugs SC (explained later) and the wordlines WL and between the bit lines BL and the word lines WL. The wordlines WL are provided to linearly extend in the y direction and arearranged in such a manner that two word lines WL pass through one activeregion K_(M). However, as shown in FIGS. 1A and 1B, only one word lineWL passes through each of active regions K_(M) located at the ends ofthe memory cell area MA.

The bit lines BL are constituted by conductor patterns formed above theprincipal surface of the semiconductor substrate 2. The bit lines BL areprovided to extend generally in the x direction while bending to passthrough central portions of the active regions K_(M) arranged in the xdirection, respectively. The upper surface of each of the bit lines BLis covered with a hard mask film 34 (cover insulating film) and theupper surface of the hard mask film 34 is exposed on the upper surfaceof an interlayer insulating film 46 (explained later). The hard maskfilm 34 functions to insulate cell capacitors C from the bit lines BL.The side surfaces of the bit lines BL are covered with silicon nitridefilms 36 and liner films 45 which are constituted of insulating films.The silicon nitride film 36 and the liner film 45 function to insulatethe storage-node contact plugs SC (explained later) from the bit linesBL.

A structure within the active regions K_(M) is explained. P-wells (notshown) are formed in the semiconductor substrate 2 in vicinity to thesurface thereof in the active regions K_(M). N-impurity diffusion layers12 are formed in the P-wells in vicinity to the surface of thesemiconductor substrate 2. The P-wells and the N-impurity diffusionlayers 12 are all formed by implanting impurity ions into thesemiconductor substrate 2. As shown in FIG. 1B, the impurity diffusionlayer 12 in each of the active regions K_(M) is divided into three partsby the corresponding two word lines WL. One of these parts (thirddiffusion layer) located between the two word lines WL works as asource/drain region common to two cell transistors (access transistors)constituting the corresponding two memory cells, and is connected to thecorresponding bit line BL via a bit-line contact plug BC. Each of theremaining two parts (second diffusion layers) is works as the othersource/drain region of each of the two cell transistors and is connectedto a corresponding lower electrode 86 (second conductive layer) of thecell capacitor C (capacitive element, an information accumulationelement) via the corresponding storage-node contact plug SC (secondcontact plug).

The interlayer insulating film 46 (first insulating layer, firstinterlayer insulating layer) is formed on the principle surface of thesemiconductor substrate 2 and the bit lines BL are formed to be buriedin the interlayer insulating film 46. The position of the upper surfaceof the interlayer insulating film 46 is adjusted to be the same as thatof the upper surface of the hard mask film 34 that coverts the uppersurfaces of the bit lines BL. The storage-node contact plugs SC areformed to pass through the interlayer insulating film 46. Each of thelower surfaces of the storage-node contact plugs SC is in contact withthe corresponding impurity diffusion layer 12. Each of the uppersurfaces of the storage-node contact plugs SC is in contact with thecorresponding lower electrode 86 of the corresponding cell capacitor C,respectively. Each of the storage-node contact plugs SC is composed of alower-layer contact plug and an upper-layer contact plug, which isexplained later in detail with the explanations of a manufacturing step.Insulation between adjacent ones of the storage-node contact plugs SCacross the element isolation regions I is ensured by a silicon nitridefilm 56 formed in the same layer as the interlayer insulating film 46.

A silicon nitride film 70 (second insulating layer, second interlayerinsulating layer) is formed on the upper surface of the interlayerinsulating film 46, and a silicon nitride film 75 (third insulatinglayer, third interlayer insulating layer) is formed on the upper surfaceof the silicon nitride film 70. These films 70 and 75 are provided toprevent the storage-node contact plugs SC and the hard mask film 34 frombeing damaged at the time of formation of conductive lines PL (explainedlater) formed in the peripheral circuit area PA. Details thereof areexplained later with the explanations of the manufacturing step. Asilicon oxide film 92 is further formed on the upper surface of thesilicon nitride film 75.

Each of the cell capacitors C is composed of the lower electrode 86, acapacitor insulating film 87 (fourth insulating layer) and upperelectrodes 88, 89, and 90 (third conductive layer).

The lower electrodes 86 are conductors of a bottomed cylinder shapeprovided in each of the cell capacitors C. Although details thereof areexplained later, the lower electrodes 86 are formed by providingcylinder holes passing through an insulting film (a silicon oxide film81 and an interlayer insulating film 80 shown in FIG. 48 explainedlater), which is temporarily formed at the time of manufacturing, andthe silicon nitride films 70 and 75 and then covering the inner surfacesof the cylinder holes. Parts of the side surfaces of each of the lowerelectrodes 86 located at the height of the silicon nitride films 70 and75 are surrounded or covered by the silicon nitride films 70 and 75.

Each of the lower electrodes 86 is arranged at positions substantiallyoverlapping with the corresponding storage-node contact plug SC in aplanar view as shown in FIG. 1A. The lower surface of each of the lowerelectrodes 86 is in contact with the corresponding storage-node contactplug SC as shown in FIG. 1B. A lower end of each of the lower electrodes86 is arranged so as to sink into the corresponding storage-node contactplug SC.

A silicon nitride film 82 (support film) is formed to connect adjacenttwo lower electrode 86 s to each other as shown in FIG. 1B. The siliconnitride film 82 is provided so that the lower electrodes 86 having highaspect ratio can support each other, thereby preventing collapse of thelower electrodes 86 during formation of the cell capacitors C after thesilicon oxide film 81 and the interlayer insulating film 80 explainedlater are removed.

The capacitor insulating film 87 is a thin insulating film that coversthe whole of the surface of each of the lower electrodes 86corresponding to the inside of the bottomed cylinder and the remainingpart located above the silicon nitride film 75. The upper electrode 88is a conductor formed to face the corresponding lower electrodes 86 viathe capacitor insulating film 87. That is, each of the cell capacitors Chas a configuration in which the lower electrode 86 and the upperelectrode 88 face each other with an intervention of the capacitorinsulating film 87. The upper electrode 89 is a conductor formed to fillhollow areas of the upper electrode 88, and the upper electrode 90 is aconductor covering surface of the upper electrode 89. A surface of theupper electrode 90 is covered with a silicon oxide film 91 as shown inFIG. 1B. The silicon oxide film 92 described above is formed in athickness to cover the upper surface of the silicon oxide film 91 afterformation of the silicon oxide film 91 is completed.

A plurality of conductive lines PL (first conductive layer, wiringlayer) and a plurality of metal gates MG are then formed in theperipheral circuit area PA.

Each of the conductive lines PL is constituted of a conductor patternthat is formed on the upper surface of the interlayer insulating film46. Although the conductive lines PL are illustrated as conductorpatterns extending in the y direction in FIGS. 1A to 1F, actualconductive lines PL may have more complicated patterns. The conductivelines PL are formed to pass through the silicon nitride film 70 and theupper surfaces of the conductive lines PL are covered with the siliconnitride film 75.

Each of the metal gates MG is constituted of a conductor pattern that isformed on the principle surface of the semiconductor substrate 2 with anintervention of a gate insulating film 21. Although the metal gates MGare also illustrated as conductor patterns extending in the y directionin FIGS. 1A to 1F, actual metal gates MG may have more complicatedpatterns. The upper surface of each of the metal gates MG is coveredwith the hard mask film 34, similarly to the bit lines BL. The hard maskfilms 34 function to insulate the conductive lines PL from the metalgates MG, respectively. The side surfaces of each of the metal gates MGare covered with the silicon nitride films 36, silicate glass films 39,and the liner films 45. These films 36, 39 and 45 covering the sidesurfaces of the metal gates MG function to insulate peripheral contactplugs PC, which are explained later, from the metal gates MG,respectively.

A structure within the active regions K_(P) will be explained next.While the active regions K_(P) include regions in which N-channel MOStransistors are to be formed and regions in which P-channel MOStransistors are to be formed, only one of the active regions K_(P) inwhich the N-channel MOS transistors are to be formed is illustrated inFIGS. 1A to 1F and each figure described below. Although explanationswill be given below with attention focused on the one active regionK_(P) in which the N-channel MOS transistors are to be formed, each ofthe active regions K_(P) in which the P-channel MOS transistors are tobe formed has an identical structure except that the conductive type ofa well and impurity diffusion layers is changed.

P-wells (not shown) are formed in the semiconductor substrate 2 invicinity to the surface thereof in the active region K_(P) in which theN-channel MOS transistors are to be formed. N-impurity diffusion layers41 (first diffusion layers) are formed in the P-wells in vicinity to thesurface of the semiconductor substrate 2. The impurity diffusion layers41 are formed by implanting N-impurities of a high concentration intothe surface areas after forming N-type low-concentration impuritydiffusion layers 38 in the same surface areas.

Attention is focused on the active region K_(P) shown in FIGS. 1A to 1F.Two metal gates MG extending in the y direction are formed on the activeregion K_(P). The impurity diffusion layers 41 are arranged on an arealocated between the two metal gates MG in a planar view and two areaslocated on both sides of the two metal gates MG in a planar view, thatis, arranged on three areas in total. The impurity diffusion layers 41are connected to the conductive lines PL via the peripheral contactplugs PC (first contact plugs), respectively. Although FIGS. 1A to 1Fillustrate the impurity diffusion layers 41 connected to differentconductive lines PL, respectively, the impurity diffusion layers 41 maypractically be connected to the same conductive line PL in some cases.With this structure, peripheral transistors each having the metal gateMG as a gate electrode and the impurity diffusion layers 41 assource/drain regions on the both sides of the metal gate MG are formedin the active region K_(P).

A manufacturing method of the semiconductor device 1 having the abovestructure will be next explained with reference to FIGS. 2A to 49F.

As shown in FIGS. 2A to 2F, a pad oxide film 3 and a silicon nitridefilm 4 are first formed on the entire surface of the semiconductorsubstrate 2. Parts of the pad oxide film 3 and the silicon nitride film4 formed on an area to be the element isolation regions I is thenremoved by etching to form element isolation trenches t1. The pad oxidefilm 3 may be formed by thermally oxidizing the surface of thesemiconductor substrate 2. Meanwhile, the silicon nitride film 4 may beformed by an LPCVD (Low Pressure Chemical Vapor Deposition) method or aplasma CVD (plasma Chemical Vapor Deposition) method. A stacked filmincluding a silicon nitride film, an amorphous carbon film, a siliconnitride film, and a silicon oxide film successively stacked from a sidenearer to the pad oxide film 3 can be used instead of the siliconnitride film 4. In this case, it is preferable to form the siliconnitride film as the first layer by the LPCVD method and to form thesilicon nitride film as the third layer and the silicon oxide film asthe fourth layer by the plasma CVD method.

A radical oxide film 5 is then formed on the entire surface includingthe inner surfaces of the element isolation trenches t1 as shown inFIGS. 3A to 3F. The radical oxide film 5 may be formed by an ISSG(In-Situ Steam Generation) method or an LPRO (Low Pressure RadicalOxidation) method.

Silicon oxide films 6 and 7 are then successively formed on the entiresurface as shown in FIGS. 4A to 4F. It is suitable to form the siliconoxide film 6 by an F-CVD (Flowable Chemical Vapor Deposition) method andto form the silicon oxide film 7 by an HDP-CVD (High-Density PlasmaChemical Vapor Deposition) method. Annealing is once performed afterformation of the silicon oxide film 6. The silicon oxide film formed bythe F-CVD method has such a thickness that the element isolationtrenches t1 relatively narrow in the memory cell area MA are filled withthe silicon oxide film 6 while the element isolation trenches t1relatively wide in the peripheral circuit area PA are not filled withthe silicon oxide film 6. The silicon oxide film 7 functions to fillportions of the element isolation trenches t1 in the peripheral circuitarea PA that are not completely filled with the silicon oxide film 6.

After the silicon oxide film 7 is formed, CMP (Chemical MechanicalPolishing) is then performed by using the silicon nitride film 4 as astopper, whereby the upper surfaces of the silicon oxide film 6 and thesilicon oxide film 7 become at the same level as the upper surface ofthe silicon nitride film 4 as shown in FIGS. 5A to 5F. With theforegoing steps, formation of the element isolation regions I composedof the radical oxide film 5, the silicon oxide film 6, and the siliconoxide film 7 is completed.

The silicon nitride film 4 is then removed by wet etching to expose thepad oxide film 3 as shown in FIGS. 6A to 6F. In FIGS. 6A to 6F and thefollowing figures, the radical oxide film 5, the silicon oxide film 6,and the silicon oxide film 7 are illustrated collectively as the elementisolation regions I. In this step, the upper surfaces of the elementisolation regions I are also etched and consequently the upper surfacesof the element isolation regions I and the upper surface of the padoxide film 3 become at substantially the same level.

At this stage, wells W1 to W3 are formed in the semiconductor substrate2 as shown in FIG. 7B. The wells W1 to W3 are not shown in figures otherthan FIG. 7B. Manufacturing method of the wells W1 to W3 willspecifically be explained. First, phosphorus is implanted at a highenergy with covering the peripheral circuit area PA with a resist (notshown) to form an N-type well W1 (N-well) having a depth which is deeperthan that of the element isolation regions I. Because the peripheralcircuit area PA is covered with the resist, the well W1 is formed onlyin the memory cell area MA.

An area in the peripheral circuit area PA other than the active regionsK_(P) in which the N-channel MOS transistors are to be formed and thememory cell area MA are then covered with a resist (not shown) and boronis implanted in this state at a high energy. Accordingly, a P-type wellW2 (P-well) is formed in the active regions K_(P) in which the N-channelMOS transistors are to be formed. Phosphorus is then further implantedat a low energy into the well W2 to adjust a threshold voltage of theN-channel MOS transistors to a desired value. Although not shown, anarea in the peripheral circuit area PA other than the active regionsK_(P) in which the P-channel MOS transistors are to be formed and thememory cell area MA are then covered with a resist (not shown) andphosphorus is implanted in this state at a high energy. Accordingly, anN-type well (N-well (not shown)) is formed in the active regions K_(P)in which the P-channel MOS transistors are to be formed. Boron is thenfurther implanted at a low energy into the N-well to adjust a thresholdvoltage of the P-channel MOS transistors to a desired value.

The peripheral circuit area PA is then covered with a resist (not shown)again and boron is implanted in this state at a high energy to form aP-type well W3 (P-well) having a depth which is shallower than that ofthe well W1. Also the well W3 is formed only in the memory cell area MA.Phosphorus is further implanted after forming the well W3 to form theN-impurity diffusion layer 12 in the surface of the semiconductorsubstrate 2.

After the pad oxide film 3 is then removed by wet etching, a thermaloxide film 10 having a thickness of several nanometers is formed on theentire surface of the semiconductor substrate 2 by thermal oxidizationas shown in FIGS. 7A to 7F. The thermal oxide film 10 can be formed withthe pad oxide film 3 kept in the peripheral circuit area PA. After thethermal oxide film 10 is formed, a silicate glass film 11 is formed onthe entire surface as shown in FIGS. 7A to 7F. Specifically, thesilicate glass film 11 may be a non-doped silicate glass film grown bythe LPCVD method using a mixed gas containing tetraethoxysilane (TEOS).

The word lines WL shown in FIGS. 1A to 1F are then formed. Specifically,word trenches t2 are first formed as shown in FIGS. 8A to 8F. The wordtrenches t2 may be formed by first patterning the silicate glass film 11according to planar shapes of the word trenches t2 using resist patterns(not shown) and then etching the thermal oxide film 10, the elementisolation regions I, and the semiconductor substrate 2 using thepatterned silicate glass film 11 as a mask. The word trenches t2 thusformed are relatively deep in the element isolation regions I as shownin FIG. 8D and relatively shallow in the active regions K_(M). Astructure in which the active region K_(M) of a fin-shaped protrudesfrom the bottom of the word trench t2 is obtained and the protrudedportion is referred to as saddle fin 2 a.

Thermal oxidization is then performed to form the gate insulating film15 on the inner surfaces of the word trenches t2 in which thesemiconductor substrate 2 is exposed in the active regions K_(M) asshown in FIGS. 9A to 9F. A titanium nitride film 16 and a tungsten film17 are then successively formed on the entire surface as shown in FIGS.10A to 10F. The titanium nitride film 16 has such a thickness to thinlycover a surface of the gate insulating film 15. Meanwhile, the tungstenfilm 17 has such a thickness to completely fill the entire word trenchest2. After the tungsten film 17 is formed, the titanium nitride film 16and the tungsten film 17 are then etched back as shown in FIGS. 11A to11F. The etchback is performed such that the upper surfaces of thetitanium nitride film 16 and the tungsten film 17 are positioned severalnanometers above a lower end of the impurity diffusion layer 12. Thetitanium nitride film 16 and the tungsten film 17 remaining inside theword trenches t2 after the etchback constitute the word lines WL.

The silicon nitride film 18 is then formed to fill upper portions of theword trenches t2 as shown in FIGS. 12A to 12F. In FIGS. 12A to 12F andthe following figures, the titanium nitride film 16 and the tungstenfilm 17 are illustrated collectively as the word lines WL. The siliconnitride film may be a stacked film including a silicon nitride filmformed by the LPCVD method and a silicon nitride film formed by an ALD(Atomic Layer Deposition) method. After the silicon nitride film 18 isformed, the silicon nitride film 18 is etched back such that thesilicate glass film 11 is exposed to cause the silicon nitride film 18to remain only inside of the word trenches t2 as shown in FIGS. 13A to13F.

Only the memory cell area MA is then covered with a resist 20 as shownin FIGS. 14A to 14F. The silicate glass film 11 and the thermal oxidefilm 10 formed on the peripheral circuit area PA are removed by wetetching with covering the memory cell area MA with a resist 20.Accordingly, the surface of the semiconductor substrate 2 is exposed inthe active region K_(P).

After the resist 20 is then removed, thermal oxidization is performed toform the gate insulating film 21 on the surfaces of the active regionK_(P) as shown in FIGS. 15A to 15F. Next, a non-doped amorphous siliconfilm 22 is formed on the entire surface as shown in FIGS. 16A to 16F.The thickness of the amorphous silicon film 22 is adjusted to cause theupper surface of the amorphous silicon film 22 located in the peripheralcircuit area PA being substantially the same plane as the upper surfaceof the silicate glass film 11 remaining in the memory cell area MA.

As shown in FIGS. 17A to 17F, a part of the amorphous silicon film 22formed on the active regions K_(P) is converted into a polysilicon film24 doped with N-impurities where the N-channel MOS transistors are to beformed. Furthermore, a part of the amorphous silicon film 22 formed onthe active regions K_(P) is converted into a polysilicon film doped withP-impurities where the P-channel MOS transistors are to be formed (notshown). More specifically, as shown in FIGS. 17A to 17F, the area otherthan the active regions K_(P) in which the N-channel MOS transistors areto be formed on the peripheral circuit area PA and the memory cell areaMA are first covered with a resist 23 and phosphorus is implanted inthis state at a low energy into an exposed part of the amorphous siliconfilm 22. Although not shown, the area other than the active regionsK_(P) in which the P-channel MOS transistors are to be formed on theperipheral circuit area PA and the memory cell area MA are then coveredwith a resist and boron is implanted in this state at a low energy intoan exposed part of the amorphous silicon film 22. After the resist isremoved, heat treatment by a RTP (Rapid Thermal Process) method is thenperformed to activate the implanted phosphorus and boron and topolycrystallize the amorphous silicon film 22. Accordingly, theamorphous silicon film 22 in the active regions K_(P) in which theN-channel MOS transistors are to be formed is converted into thepolysilicon film 24 doped with the N-impurities. The amorphous siliconfilm 22 in the active regions K_(P) in which the P-channel MOStransistors are to be formed is converted into the polysilicon filmdoped with the P-impurities. The amorphous silicon film 22 in the memorycell area MA and the like are converted into a polysilicon film 27.

A silicon oxide film 25 is then formed on the entire surface by usingthe plasma CVD method as shown in FIGS. 18A to 18F. The silicon oxidefilm 25 and the polysilicon film 27 are then etched with covering theperipheral circuit area PA with a resist 26. Accordingly, the siliconoxide film 25 and the polysilicon film 27 formed on the memory cell areaMA is removed as shown in FIGS. 19A to 19F. The resist 26 is thenremoved after removing the parts of the silicon oxide film 25 and thepolysilicon film 27.

The bit-line contact plugs BC, the bit lines BL, and the metal gates MGshown in FIGS. 1A to 1F are then formed. Specifically, as shown in FIGS.20A to 20F, a bit-line contact mask 30 having an opening exposing a partof the silicate glass film 11 is first formed. The opening is located ata position overlapping in a planar view with the impurity diffusionlayer 12 to which the bit-line contact plug BC is to be connected. Ahole-pattern shrink process called RELACS (Resolution EnhancementLithography Assisted by Chemical Shrink) may be used to form thebit-line contact mask 30. The silicate glass film 11 and the thermaloxide film 10 are then successively and selectively removed by dryetching using the bit-line contact mask 30 as a mask, thereby thesurface of the semiconductor substrate 2 that is the surface of theimpurity diffusion layer 12 is exposed in the opening as shown in FIGS.21A to 21F. The concentration of impurities of the impurity diffusionlayer 12 can be increased by performing ion implantations of theimpurities again into the exposed surface of the impurity diffusionlayer 12.

After the bit-line contact mask 30 is then removed, a polysilicon film31 doped with impurities is formed on the entire surface by the CVDmethod as shown in FIGS. 22A to 22F. The polysilicon film 31 is thenetched back until a surface of the silicate glass film 11 appears, andthen the silicon oxide film 25 formed in the peripheral circuit area PAis removed by etching. This step causes the polysilicon film 31 toremain only in an area between two word lines WL passing through one ofthe active regions K_(M). Further this step exposes the surfaces of thepolysilicon film 24 (and the polysilicon film formed in the activeregion K_(P) in which the P-channel MOS transistors are to be formed anddoped with the P-impurities) and the silicate glass film 11, as shown inFIGS. 23A to 23F. The amount of etching and selectivity thereof in thisstep are preferably adjusted to cause the exposed surfaces to form thesame plane.

As shown in FIGS. 24A to 24F, a conductive material 33, the hard maskfilm 34, an amorphous carbon film (not shown), a silicon oxynitride film(not shown), and a silicon oxide film 35 are then successively formed onthe entire surface. The conductive material 33 may include a tungstensilicide film, a tungsten nitride film, and a tungsten film successivelystacked. The hard mask film 34 may include a silicon nitride film and asilicon oxide film successively stacked. As shown in FIGS. 25A and 25F,the bit lines BL and the metal gates MG are then formed by dry etchingthe silicon oxide film 35, the silicon oxynitride film, the amorphouscarbon film, and the hard mask film 34, and the conductive material 33.This process is performed by transferring a desired pattern to thesilicon oxide film 35, the silicon oxynitride film, the amorphous carbonfilm, and the hard mask film 34, and then etching the conductivematerial 33 by using the amorphous carbon film and the hard mask film 34as a mask. This patterning allows the polysilicon film 31 located underthe bit lines BL to be patterned into shapes of the bit-line contactplugs BC. In the peripheral circuit area PA, the polysilicon film 24(and the polysilicon film formed in the active regions K_(P) in whichthe P-channel MOS transistors are to be formed and doped with theP-impurities) is also patterned into the shapes of the metal gates MG.The metal gates MG is a stacked film including the polysilicon film andthe conductive material 33 which have been patterned in this way.

As shown in FIGS. 26A to 26F, the silicon nitride film 36 serving as athin offset spacer is then formed on the entire surface. In FIGS. 26A to26F and the following figures, the polysilicon film 24 and theconductive material 33 are illustrated collectively as the metal gatesMG. The area of the peripheral circuit area PA other than the activeregions K_(P) in which the N-channel MOS transistors are to be formedand the memory cell area MA are then covered with a resist 37 as shownin FIGS. 27A to 27F. N-impurities are implanted in this state to formthe N-type low-concentration impurity diffusion layers 38 in the surfaceof the semiconductor substrate 2 in the active regions K_(P) in whichthe N-channel MOS transistors are to be formed. The silicon nitride film36 is etched back to form side wall films consisting of the siliconnitride film 36. Further, unnecessary parts of the gate insulating film21 formed on the surfaces of the active regions K_(P) are etched whichare not covered by the metal gates MG and the side wall films. Theresist 37 is removed after the above steps end. Although not shown, alsoin the active regions K_(P) in which the P-channel MOS transistors areto be formed, formation of P-type low-concentration impurity diffusionlayers and formation of the side wall films consisting of the siliconnitride film 36 and etching of the gate insulating film 21 are performedin identical steps.

The silicate glass film 39 is then formed on the entire surface as shownin FIGS. 28A to 28F. Specifically, the silicate glass film 39 issuitably a non-doped silicate glass film grown by the LPCVD method usingthe mixed gas containing tetraethoxysilane (TEOS), similarly to thesilicate glass film 11. The area of the peripheral circuit area PA otherthan the active regions K_(P) in which the N-channel MOS transistors areformed and the memory cell area MA are then covered with a resist 40 asshown in FIGS. 29A to 29F. N-impurities are then implanted in this stateto form N-impurity diffusion layers 41 in the surface of thesemiconductor substrate 2 corresponding to the active region K_(P) inwhich the N-channel MOS transistors are formed. Etchback of the silicateglass film 39 is then performed to form side wall films consisting ofthe silicate glass film 39. The resist 40 is removed after the abovesteps end. Although not shown, also in the active regions K_(P) in whichthe P-channel MOS transistors are formed, formation of a P-impuritydiffusion layers and formation of the side wall films consisting of thesilicate glass film 39 are performed in identical steps.

The peripheral circuit area PA is then covered with a resist 42 as shownin FIGS. 30A to 30F. Wet etching of the silicate glass film 39, etchbackof the silicon nitride film 36, and etching of the silicate glass film11 and the silicon nitride film 18 are successively performed in thisstate. Accordingly, the silicate glass film 39 is first removedcompletely in the memory cell area MA as shown in FIGS. 30A to 30F. Thesilicon nitride film 36 remains as side wall films that cover the sidesurfaces of the bit lines BL, the bit-line contact plugs BC, and thehard mask film 34. Portions other than the side wall films of thesilicon nitride film 36 are removed. Only parts of the silicate glassfilm 11 which are not covered by the bit lines BL and the side wallfilms consisting of the silicon nitride film 36 remain, and other partsof the silicate glass film 11 are removed. In the memory cell area MA,the upper surfaces of the silicon nitride film 18, the thermal oxidefilm 10, and the element isolation regions I form the same plane afterthis step ends. The resist 42 is removed after the above steps end.

The liner film 45 (an SOD liner) consisting of a silicon nitride film isthen formed on the entire surface as shown in FIGS. 31A to 31F. Theinterlayer insulating film 46 (first insulating layer) consisting of aspin-on insulating film (SOD) is then formed on the entire surface asshown in FIGS. 32A to 32F. The interlayer insulating film 46 may beformed by coating a coat film including a polysilazane on the entiresurface and then modifying the coat film by heat treatment.

After the interlayer insulating film 46 is formed, the surface thereofis flattened by a method such as CMP (Chemical Mechanical Polishing)until the upper surface of the liner film 45 is exposed as shown inFIGS. 33A to 33F. A silicate glass film 47 is then formed on the entiresurface by the LPCVD method using the mixed gas containingtetraethoxysilane (TEOS) and further a polysilicon film 48 is formed onthe entire surface.

The storage-node contact plugs SC and the peripheral contact plugs PCshown in FIG. 1 is then formed. Specifically, as shown in FIGS. 34A to34F, a resist 50 is first formed on the entire surface and openings thatspread in the x direction in both sides of the element isolation regionI extending in the y direction in the memory cell area MA are providedin the resist 50 as shown in FIG. 34A. Etching is then performed usingthe resist 50 having the openings as a mask to form storage-node contactsack holes t3 passing through the polysilicon film 48, the silicateglass film 47, and the interlayer insulating film 46 as shown in FIGS.34A to 34F. The liner film 45 is exposed on the bottom surfaces of thestorage-node contact SAC holes t3 formed in this way.

A silicon nitride film is then formed on the entire surface and etchbackis then performed to form a side-wall insulating films 51 that coversthe inner side surfaces of the storage-node contact SAC holes t3 asshown in FIGS. 35A to 35F. This etchback also removes the liner film 45exposed on the bottom surfaces of the storage-node contact SAC holes t3and the thermal oxide film 10 located thereunder together with parts ofthe silicon nitride film formed on a horizontal plane.

A polysilicon film 53 doped with N-impurities is then formed and etchedback, whereby the polysilicon film 53 is embedded in lower portions ofthe storage-node contact SAC holes t3 as shown in FIGS. 35A to 35F. Theresidual film thickness of the polysilicon film 53 may be set to locatethe upper surface of the polysilicon film 53 at a position higher thanthe upper surfaces of the bit lines BL and higher than the upper surfaceof the hard mask film 34.

A silicon nitride film 55 is then formed on the entire surface by theCVD method as shown in FIGS. 36A to 36F. The silicon nitride film 55 isthen etched back to cause the silicon nitride film 55 to remain only onthe inner side surfaces of the storage-node contact SAC holes t3 asshown in FIGS. 37A to 37F. Then the polysilicon film 53 is etched by dryetching using the remaining silicon nitride film 55 as a mask. Thisetching is performed until the polysilicon film 53 is divided in the xdirection and the element isolation region I is completely exposed onthe bottom surfaces of the storage-node contact SAC holes t3.

The silicon nitride film 56 is then formed on the entire surface by theCVD method as shown in FIGS. 38A to 38F. The silicon nitride film 56 isformed so that spaces in the storage-node contact SAC holes t3 (areasbetween adjacent parts of the polysilicon film 53 divided in the xdirection) are completely filled with the silicon nitride film 56. Afterthe silicon nitride film 56 is formed, polishing according to CMP isperformed until the upper surface of the polysilicon film 53 is exposedas shown in FIGS. 39A to 39F.

The polysilicon film 53 is then selectively etched back to form concaveportions t4 (second contact holes) on an upper side of the polysiliconfilm 53 as shown in FIGS. 40A to 40F. Mask patterns (not shown) arefurther formed and the interlayer insulating film 46 and the liner film45 are etched using the mask patterns as a mask to form peripheralcontact holes t5 (first contact holes) that expose the impuritydiffusion layers in formation areas of the peripheral contact plugs PCas shown in FIGS. 41A to 41F.

A cobalt film (not shown) is then formed on the entire surface includingthe bottom surfaces of the concave portions t4 and the peripheralcontact holes t5 by sputtering. Then, parts of the cobalt film incontact with silicon or polysilicon are changed into a cobalt silicidefilm by heat treatment. In this way, a cobalt silicide film 62 shown inFIGS. 42A to 42F is formed on the bottom surfaces of the concaveportions t4 and the peripheral contact holes t5. Parts of the cobaltfilm not having changed into the cobalt silicide film 62 are all removedby wet etching after the heat treatment.

A stacked film 63 including titanium nitride and titanium and a tungstenfilm 64 are then successively formed on the entire surface by the CVDmethod as shown in FIGS. 42A to 42F. Polishing according to CMP is thenperformed until the silicon nitride film 56 is exposed. Accordingly, thestorage-node contact plugs SC (second contact plugs) and the peripheralcontact plugs PC (first contact plugs) are formed as shown in FIGS. 43Ato 43F. A structure of each of the storage-node contact plugs SC formedin this way is a two-layer structure including a lower-layer contactplug formed of the polysilicon film 53 and an upper-layer contact plugformed of the cobalt silicide film 62, the stacked film 63 includingtitanium nitride and titanium, and the tungsten film 64. The peripheralcontact plugs PC are formed of the cobalt silicide film 62, the stackedfilm 63 including titanium nitride and titanium, and the tungsten film64.

The conductive lines PL shown in FIGS. 1A to 1F are then formed.Specifically, as shown in FIGS. 44A to 44F, the silicon nitride film 70(second insulating layer) and a silicon oxide film 71 are successivelyformed on the entire surface including the upper surface of theinterlayer insulating film 46. In FIGS. 44A to 44F and the followingfigures, the polysilicon film 53, the cobalt silicide film 62, thestacked film 63 including titanium nitride and titanium, and thetungsten film 64 are illustrated collectively as the storage-nodecontact plugs SC. The cobalt silicide film 62, the stacked film 63including titanium nitride and titanium, and the tungsten film 64 areillustrated collectively as the peripheral contact plugs PC.

Wiring trenches t6 having patterns of the conductive lines PL are thenformed in the silicon nitride film 70 and the silicon oxide film 71 byphotolithography and etching as shown in FIGS. 45A to 45F. Each of thewiring trenches t6 has a depth slightly exceeding a depth that passesthrough the silicon nitride film 70 and the silicon oxide film 71.Accordingly, the upper surfaces of the peripheral contact plugs PC areexposed on the bottom surfaces of the wiring trenches t6.

A titanium nitride film 73 and a tungsten film 74 are then successivelyformed by the CVD method and are polished according to CMP until theupper surface of the silicon oxide film 71 is exposed. Thereby thewiring trenches t6 are filled with a stacked film (first conductivelayer) including the titanium nitride film 73 and the tungsten film 74as shown in FIGS. 46A to 46F. The stacked film 73 and 74 thus formed inthe wiring trenches t6 constitutes the conductive lines PL. After theconductive lines PL are formed, the silicon oxide film 71 is selectivelyremoved by etching and then the silicon nitride film 75 (thirdinsulating layer) is formed on the entire surface as shown in FIGS. 47Ato 47F. The silicon nitride film 75 has a thickness that the side andupper surfaces of the conductive lines PL are completely covered withthe silicon nitride film 75.

A principle effect of this embodiment of the present invention isprovided by these formation steps of the conductive lines PL. That is,in the above steps, the conductive lines PL are formed not by patterninga conductive film, but by first forming the silicon nitride film 70,forming the wiring trenches t6 therein, and embedding a conductive filmin the wiring trenches t6. Therefore, it can be said that thestorage-node contact plugs SC and the hard mask film 34 are covered withthe silicon nitride film 70 at a time of etching of the conductive filmthat constitutes the conductive lines PL and that damaging of thestorage-node contact plugs SC and the hard mask film 34 at the time offormation of the conductive film that constitutes the conductive linesPL is thus suitably prevented.

The cell capacitors C shown in FIGS. 1A to 1F are then formed.Specifically, the interlayer insulating film 80 made of BPSG (Boronphosphorus Silicon Glass), the silicon oxide film 81, the siliconnitride film 82, a silicon film 83, and a silicon oxide film 84 aresuccessively formed as shown in FIGS. 48A to 48F. A resist 85 is thenfurther formed on the upper surface of the silicon oxide film 84 andopenings are formed in the resist 85 on formation areas of the cellcapacitors C. Formation patterns of the cell capacitors C are firsttransferred onto the silicon oxide film 84 and the silicon film 83 byetching using the resist 85 as a mask, and the formation patterns of thecell capacitors C are then transferred onto the silicon nitride film 82,the silicon oxide film 81, and the interlayer insulating film 80 byetching using the silicon oxide film 84 and the silicon film 83 as amask. Accordingly, cylinder holes t7 (openings) passing through thesilicon nitride film 82, the silicon oxide film 81, and the interlayerinsulating film 80 are formed in the formation areas of the cellcapacitors C, respectively, as shown in FIGS. 49A to 49F. The uppersurfaces of the corresponding storage-node contact plugs SC are exposedon the bottom surfaces of the cylinder holes t7, respectively.

A stacked film including titanium nitride and titanium is then formed onthe entire surface, and a silicon oxide film doped with P-impurities(not shown) is further formed thereon. The silicon oxide film doped withthe P-impurities has a poor coverage and thus closes the upper ends ofthe cylinder holes t7 without entering into the cylinder holes t7. Aresist (not shown) is applied on the entire surface in this state andthe silicon nitride film 82 is patterned into patterns of the supportfilm having explained with reference to FIGS. 1A to 1F byphotolithography and etching. This etching also etches the stacked filmincluding titanium nitride and titanium at the same time. Accordingly,parts of the formed stacked film including titanium nitride andtitanium, formed outside of the cylinder holes t7 are removed and thelower electrode 86 in a bottomed cylinder shape is formed in each of thecylinder holes t7 to cover the inner surface. The lower surfaces of thelower electrodes 86 thus formed are in contact with the upper surfacesof the corresponding storage-node contact plugs SC, respectively.

After the silicon oxide film 81 and the interlayer insulating film 80are then removed by etching, the capacitor insulating film 87 (fourthinsulating layer), the upper electrode 88 (third conductive layer) beinga titanium nitride film, and the upper electrode 89 being a polysiliconfilm doped with boron are successively formed on the entire surface bythe CVD method. The capacitor insulating film 87 may be a stacked film(a LAZO film) including an amorphous zirconium oxide film and analuminum oxide. Further, the upper electrode 90 being a tungsten filmand the silicon oxide film 91 are successively formed on the entiresurface by sputtering as shown in FIGS. 1A to 1F. With the foregoingsteps, the cell capacitors C are completed. Parts of the films formed inthe peripheral circuit area PA are then removed by photolithography andetching, and the silicon oxide film 92 is further formed on the entiresurface and is flattened according to CMP, whereby the semiconductordevice 1 shown in FIGS. 1A to 1F is completed.

As explained above, with the semiconductor device 1 and themanufacturing method thereof according to the present embodiment, theconductive lines PL connected to the peripheral contact plugs PC can beformed in a state where the silicon nitride film 70 covers thestorage-node contact plugs SC and the hard mask film 34. Therefore,damaging of the storage-node contact plugs SC and the hard mask film 34at the time of formation of the conductive lines PL can be prevented.Accordingly, a reduction in a short margin between the bit lines BL andthe lower electrodes 86 can be also prevented.

It is apparent that the present invention is not limited to the aboveembodiments, but may be modified and changed without departing from thescope and spirit of the invention.

For example, the widths of the conductive lines PL are larger than thewidths of the peripheral contact plugs PC in the x direction and theentire upper surfaces of the peripheral contact plugs PC are in contactwith the lower surfaces of the wires PL in the above embodiment.However, the widths of the wires PL can be alternatively set to besmaller than the widths of the peripheral contact plugs PC in the xdirection to cause only parts of the upper surfaces of the peripheralcontact plugs PC to be in contact with the lower surfaces of theconductive lines PL as shown in FIGS. 50A to 50F.

Furthermore, not only the silicon nitride film 70 but also the siliconoxide film 71 is formed before the wiring trenches t6 for embeddingtherein the conductive lines PL are formed and the wiring trenches t6are formed to pass through the silicon nitride film 70 and the siliconoxide film 71 in the above embodiment. However, it is alternativelypossible to form the silicon nitride film 70 thickly and to form thewiring trenches t6 only in the silicon nitride film 70 as shown in FIGS.51A to 51F. In this case, the silicon oxide film 71 and the siliconnitride film 75 are not used. However, this causes the silicon nitridefilm 70 serving as an etching stopper to be too thick while simplifyingthe manufacturing steps. Therefore, it is more difficult to ensure ashort margin between the bit lines BL and the lower electrodes 86 thanin the above embodiment.

In addition, while not specifically claimed in the claim section, theapplicant reserves the right to include in the claim section of theapplication at any appropriate time the following methods:

A1. A manufacturing method of a semiconductor device, the manufacturingmethod comprising:

forming a first insulating layer on a surface of a semiconductorsubstrate;

forming first and second contact holes in the first insulating layer;

forming a conductive film filling the first and second contact holes;

forming first and second contact plugs in the first and second contactholes, respectively, by partially removing the conductive film on thefirst insulating layer;

forming a second insulating layer on the first insulating layer;

forming a wiring trench exposing an upper surface of the first contactplug in the second insulating layer;

filling the wiring trench with a first conductive layer; forming a thirdinsulating layer on the second insulating layer;

forming an opening passing through at least the second and thirdinsulating layers to expose an upper surface of the second contact plug;and

forming a second conductive layer on an inner surface of the opening.

A2. The manufacturing method of a semiconductor device as described inA1, further comprising implanting impurities into the surface of thesemiconductor substrate to form first and second diffusion layers,

wherein the first and second contact plugs are connected to the firstand second diffusion layers, respectively.

A3. The manufacturing method of a semiconductor device as described inA1, further comprising:

forming a fourth insulating layer covering the second conductive layer;and

forming a third conductive layer facing the second conductive layeracross the fourth insulating layer.

A4. The manufacturing method of a semiconductor device as described inA3, wherein the second and third conductive layers and the fourthinsulating layer constitute a capacitive element.

A5. The manufacturing method of a semiconductor device as described inA2, further comprising:

implanting impurities into the surface of the semiconductor substrate toform a third diffusion layer; and

forming a wiring layer connected to the third diffusion layer before thefirst insulating layer is formed.

What is claimed is:
 1. A semiconductor device comprising: a substratecomprising a memory cell area and a peripheral circuitry area laterallyof the memory cell area; a conductive line disposed within theperipheral circuitry area, the conductive line including a side surfaceand a upper surface; a capacitor disposed within the memory cell area,the capacitor including a lower electrode, the lower electrode includinga side surface; a first insulating material extending continuouslybetween the conductive line and the lower electrode, the firstinsulating material being in direct physical contact with a part of theside surface of the conductive line and in direct physical contact witha part of the side surface of the lower electrode of the capacitor; anda second insulating material covering and in direct physical contactwith the upper surface of the conductive line, the second insulatingmaterial extending continuously over the first insulating layer andbeing in direct physical contact with a remaining part of the sidesurface of the conductive line and being in direct physical contact withthe side surface the lower electrode of the capacitor.
 2. The device ofclaim 1, wherein capacitor further comprises: an upper electrodesurrounding the lower electrode and comprising a cup shape protrudingupwardly; and a capacitor insulating film intervening between the upperand the lower electrodes of the capacitor.
 3. The device of claim 1,further comprising: a third insulating material extending continuouslyover the capacitor and over the second insulating layer, wherein thesecond insulating material intervenes between the third insulating layerand the conductive line.
 4. The device of claim 1, wherein theconductive line comprises a trapezoidal shape.
 5. The device of claim 4,wherein the trapezoidal shape includes a planar upper surface and arounded bottom portion.
 6. A semiconductor device comprising: a firstconductive structure including a side surface and an upper surface; asecond conductive structure laterally spaced from the first conductivestructure, the second conductive structure including a side surface; afirst insulating material in direct physical contact with a lowerportion of the side surface of the first conductive structure, the firstinsulating material extending to the second conductive structure andbeing in direct physical contact therewith; and a second insulatingmaterial extending over the first insulating material, the secondinsulating material covering and being directly against a remainingportion of the side surface of the first conductive structure and beingin direct physical contact with the side surface of the secondconductive structure, the second insulating material being directlyagainst and covering the upper surface of the first conductivestructure.
 7. The device of claim 6, wherein the first conductivestructure is in a trapezoidal shape.
 8. The device of claim 6, whereinthe second conductive structure protrudes upwardly from the secondinsulating layer.
 9. A semiconductor device comprising: a firstconductive layer including a side surface and an upper surface; a secondconductive layer including a side surface and spaced from the firstconductive layer; a first insulating layer extending from a part of theside surface of the first conductive layer in contact therewith andterminating at a part of the side surface of the second conductive layerin contact therewith; and a second insulating layer extending from aremaining part of the side surface of the first conductive layer incontact therewith and terminating at another part of the side surface ofthe second conductive layer in contact therewith, the second insulatinglayer being elongated over the upper surface of the first conductivelayer to cover the first conductive layer, wherein the second conductivelayer protrudes upwardly from the second insulating layer and serves asa lower electrode of a capacitor, the capacitor comprising a thirdconductive layer serving as a upper electrode and surrounding the secondconductive layer, and a capacitor insulating film intervening betweenthe second and the third conductive layers.
 10. The device of claim 9,wherein the third conductive layer is elongated over the secondinsulating layer to terminate between the first and the secondconductive layers.
 11. A semiconductor device comprising: a conductiveline disposed within a peripheral circuitry area of a substrate, theconductive line including a side surface and an exposed upper surface; acapacitor disposed within the memory cell area, the capacitor includinga lower electrode having a side surface; a first insulating layerextending between the conductive line and the lower electrode in contactwith a part of the side surface of the conductive line and in contactwith a part of the side surface of the lower electrode of the capacitor;and a second insulating layer covering and in direct physical contactwith the exposed upper surface of the conductive line and extending overthe first insulating layer.